RF4E100AJTCR
ROHM Semiconductor
MOSFET N-CH 30V 10A HUML2020L8
[IN STOCK] In Stock: 49 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V |
| Current - continuous drain (Id) @ 25°C | 10A (Ta) |
| Power dissipation | 2W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerUDFN |
| Vgs(th) (Max) @ id | 1.5V @ 1mA |
| Rds on (Max) @ id, vgs | 12.4mOhm @ 10A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 13 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1460 pF @ 15 V |
RF4E100AJTCR
[ALLOC] verified