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ROHM Semiconductor RF4E100AJTCR

ROHM Semiconductor RF4E100AJTCR

MPNRF4E100AJTCR
End of Life

MOSFET N-CH 30V 10A HUML2020L8

$0.87Ref. price · indicative, final on quote
Packaging8-PowerUDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RF4E100AJTCR specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V
Current - continuous drain (Id) @ 25°C10A (Ta)
Power dissipation2W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-PowerUDFN
Vgs(th) (Max) @ id1.5V @ 1mA
Rds on (Max) @ id, vgs12.4mOhm @ 10A, 4.5V
Gate charge (Qg) (Max) @ vgs13 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1460 pF @ 15 V