RF4C100BCTCR

ROHM Semiconductor

MOSFET P-CH 20V 10A HUML2020L8

ROHM Semiconductor RF4C100BCTCR
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[IN STOCK] In Stock: 1,475 pcs
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RF4C100BCTCR specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C10A (Ta)
Power dissipation2W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case8-PowerUDFN
Vgs(th) (Max) @ id1.2V @ 1mA
Rds on (Max) @ id, vgs15.6mOhm @ 10A, 4.5V
Gate charge (Qg) (Max) @ vgs23.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1660 pF @ 10 V
RF4C100BCTCR
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