ROHM Semiconductor RD3S100CNTL1
MPNRD3S100CNTL1
End of Life
MOSFET N-CH 190V 10A TO252
$2.25Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 190 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 85W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.5V @ 1mA |
| Rds on (Max) @ id, vgs | 182mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 52 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2000 pF @ 25 V |