RD3G03BATTL1 - ROHM Semiconductor
MPNRD3G03BATTL1
End of Life
PCH -40V -35A POWER MOSFET - RD3
$1.5Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 35A (Ta) |
| Power dissipation | 56W (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.5V @ 1mA |
| Rds on (Max) @ id, vgs | 19.1mOhm @ 35A, 10V |
| Gate charge (Qg) (Max) @ vgs | 38 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2100 pF @ 20 V |