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ROHM Semiconductor RCX080N25

ROHM Semiconductor RCX080N25

MPNRCX080N25
End of Life

MOSFET N-CH 250V 8A TO220FM

$1.3Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RCX080N25 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation2.23W (Ta), 35W (Tc)
Operating temperature150°C (TJ)
PackageBulk
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 1mA
Rds on (Max) @ id, vgs600mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs15 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds840 pF @ 25 V