The RBR20BGE40ATL: Forward voltage is specified at 550 mV typical at 10 A — the conduction loss at that point is 5.5 W per diode, which sets the thermal budget for the TO-252GE package. Classified as a fast-recovery type (≤500 ns, >200 mA Io), though as a Schottky the recovery is majority-carrier — the speed spec confirms it handles the reverse-recovery demands of a 100 kHz+ switching node without a soft-recovery penalty.
The common-cathode configuration means the two anodes are independent — the tab is the shared cathode node, so the PCB layout must route both anode traces to separate pads while the tab plane carries the return current.
Lifecycle and compliance
ROHS3 compliant — the part contains no restricted substances per the EU RoHS recast directive, and no REACH SVHC declaration is outstanding. Junction temperature rating is 150 °C — the thermal design must keep the junction below this under worst-case load and ambient; the TO-252 tab area and PCB copper thickness govern the actual RthJA.
