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ROHM Semiconductor RBE2EA20ATR — Discrete Semiconductors

RBE2EA20ATR ROHM Schottky Diode, 2A, 20V, TSMD5

MPNRBE2EA20ATR
End of Life

ROHM Semiconductor RBE2EA20ATR Schottky diode, dual independent, 2 A average per diode, 20 V reverse, 390 mV forward drop, TSMD5 (SOT-23-5 Thin) surface-mount package, Tape & Reel.

$0.64Ref. price · indicative, final on quote
PackagingSOT-23-5 Thin, TSOT-23-5
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

RBE2EA20ATR specifications
ParameterValue
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)20 V
Voltage - forward (Vf) (Max) @ if390 mV @ 1 A
Current - reverse leakage @ vr700 µA @ 20 V
Current - average rectified (Io) (per diode)2A
Operating temperature - junction125°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-23-5 Thin, TSOT-23-5
Diode configuration2 Independent

Product details

Dual Schottky in a low-profile SOT-23-5

The RBE2EA20ATR packs two independent Schottky diodes into a TSMD5 package (SOT-23-5 Thin, 5-lead surface-mount). Each diode handles 2 A average rectified current with a forward drop of 390 mV at 1 A — the low Vf cuts conduction losses in a 2 A rectifier or OR-ing stage, which keeps the small package cooler in a dense layout.

Listed as fast recovery (≤ 500 ns, > 200 mA Io), this Schottky is suited for low- to medium-frequency rectification — think 50/60 Hz mains or DC-DC converter output stages up to a few hundred kHz. The 700 µA reverse leakage at 20 V is typical for a low-Vf Schottky; leakage doubles with temperature, so in a 125°C junction environment the standing loss from leakage may dominate the thermal budget.