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ROHM Semiconductor RB238T-40NZC9 — Discrete Semiconductors

ROHM RB238T-40NZC9 Schottky Diode, 40V 40A, TO-220FN

MPNRB238T-40NZC9
End of Life

ROHM Semiconductor RB238T-40NZC9 Schottky diode, 40 V reverse, 40 A average rectified per diode, common cathode pair, TO-220-3 Full Pack (TO-220FN), through hole, tube.

$2.09Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

RB238T-40NZC9 specifications
ParameterValue
Diode typeSchottky
MountingThrough Hole
Voltage - DC reverse (Vr)40 V
Voltage - forward (Vf) (Max) @ if800 mV @ 20 A
Current - reverse leakage @ vr12 µA @ 40 V
Current - average rectified (Io) (per diode)40A
Operating temperature - junction150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-3 Full Pack
Diode configuration1 Pair Common Cathode

Product details

40 A per diode, 40 V blocking — common-cathode Schottky pair

The RB238T-40NZC9: Each diode handles 40 A continuously in the TO-220FN full-pack package — the isolated tab means no insulating pad or washer between the device and the heatsink, which simplifies thermal management in a power supply or OR-ing circuit.

Forward drop and reverse leakage at the operating point

Forward voltage is 800 mV maximum at 20 A per diode — the Schottky barrier keeps conduction losses lower than a pn-junction rectifier at this current class. Reverse leakage is 12 µA at the 40 V rated blocking voltage, which ROHM markets as 'super low IR' for this series; the leakage stays contained at the rated reverse bias, reducing standby dissipation in a continuous-conduction boost or flyback stage. The junction temperature ceiling is 150 °C, and the device is classified as a fast recovery type (under 500 ns, above 200 mA Io), so it recovers quickly enough for a 50–100 kHz hard-switched converter without significant reverse-recovery loss — the Schottky structure inherently lacks stored charge, but the speed classification confirms it for higher-frequency rectification.