Dual Schottky in an isolated TO-220
The RB228T150NZC9: The TO-220 Full Pack (TO-220FN) package has a fully isolated tab — no insulating pad needed between the device and the heatsink, which simplifies mechanical assembly and reduces thermal interface resistance in a single mounting hole.
Maximum forward voltage is 880 mV at 15 A — the Schottky barrier keeps conduction losses lower than a comparable fast-recovery pn diode in the same current range. Reverse leakage is specified at 25 µA maximum at 150 V, which ROHM markets as 'super low IR'; this matters in high-temperature or high-voltage hold-off applications where leakage current adds to the thermal load. Junction temperature is rated to 150 °C, so the die's thermal budget includes the self-heating from both forward conduction and reverse leakage.
Speed classification and switching context
Classified as Fast Recovery (≤500 ns, >200 mA Io) — this speed bracket suits the output rectification stage of a 50-100 kHz SMPS or the freewheeling diode in a motor-drive bus. The common-cathode pair in one package halves the component count in a center-tap or full-wave configuration and keeps the anode-to-heatsink isolation consistent across both die.