Device identity and headline ratings
The RB218BM200FHTL: Each diode is rated for 200 V reverse voltage and 20 A average rectified current, making it suitable for high-current, fast-switching applications in automotive power systems.
Switching speed and thermal limits
The device is classified as a fast recovery type, with a recovery time of 500 ns or less at currents above 200 mA — this suits it for continuous conduction mode (CCM) boost or flyback converters where reverse recovery losses matter. Forward voltage is specified at 880 mV maximum when carrying 10 A per diode — this conduction loss figure, combined with the 10 µA reverse leakage at 200 V, gives the thermal designer the data needed for junction temperature estimation in the target duty cycle.
Automotive qualification and package fit
The RB218BM200FHTL is qualified to AEC-Q101, the automotive discrete semiconductor stress test standard, covering temperature cycling, high-temperature reverse bias, and ESD robustness. This qualification is required for underhood or chassis-mounted power stages in passenger vehicles. The surface-mount form factor suits automated pick-and-place assembly for high-volume production lines.