100 V, 10 A common-cathode Schottky in isolated TO-220FN
The RB088T100NZC9 is a 100 V, 10 A per-diode Schottky rectifier from ROHM Semiconductor, configured as a 1-pair common cathode in the TO-220FN full-pack package. The fully molded TO-220-3 Full Pack isolates the heatsink tab from the electrical circuit, so no insulating pad or washer is needed between the device and the heatsink — a clean mechanical mount for a through-hole power diode. ROHM positions this part as a super low IR (reverse leakage) device, with a maximum of 5 µA at the 100 V rated reverse voltage. That leakage figure is the headline advantage: in a rectifier or OR-ing diode application where the diode sees continuous reverse bias, the lower leakage cuts standby power loss and reduces the thermal burden on the junction.
Forward drop and switching speed
At the 5 A forward current per diode, the maximum forward voltage is 870 mV. This Vf is typical for a 100 V Schottky at this current density — the trade-off against the low leakage is a slightly higher forward drop than a higher-leakage Schottky would show, but the junction temperature stays lower under reverse bias. The fast recovery speed is rated at ≤ 500 ns for forward currents above 200 mA. That recovery time is fast enough for line-frequency rectification and moderate-speed switching supplies; for a 100 V Schottky, the recovery is dominated by the junction capacitance discharge, not stored charge, so the switching loss is low even at tens of kHz.
The 150°C maximum junction temperature rating gives thermal margin for rectifier and freewheeling applications in enclosed power supplies where ambient temperatures run high. The TO-220FN package's full mold compound means the backside tab is electrically isolated, so the heatsink can be shared across multiple diodes in the same circuit without insulation concerns.