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ROHM Semiconductor RB085BGE-60TL — Discrete Semiconductors

RB085BGE-60TL ROHM Schottky Diode, 60V 10A Common Cathode

MPNRB085BGE-60TL
End of Life

ROHM Semiconductor RB085BGE-60TL Schottky diode, 60 V, 10 A total, 1 Pair Common Cathode, TO-252-3 (DPak), Surface Mount, Fast Recovery.

$1.72Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

RB085BGE-60TL specifications
ParameterValue
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)60 V
Voltage - forward (Vf) (Max) @ if580 mV @ 5 A
Current - reverse leakage @ vr300 µA @ 60 V
Current - average rectified (Io) (per diode)5A
Operating temperature - junction150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Diode configuration1 Pair Common Cathode

Product details

60 V, 10 A common-cathode Schottky in TO-252

The RB085BGE-60TL: Each diode is rated for 5 A average rectified current, giving a total package rating of 10 A when both diodes conduct, with a maximum reverse voltage of 60 V.

At the rated forward current of 5 A per diode, the maximum forward voltage is 580 mV — this is the conduction loss floor for the 5 A load. Reverse leakage at the 60 V blocking voltage is specified at 300 µA maximum, a figure that rises sharply with junction temperature; the 150 °C maximum junction temperature means the thermal design must keep the junction below this limit to avoid runaway leakage. The part is classified as a fast recovery diode with a recovery time under 500 ns at forward currents above 200 mA, which suits it for switching applications where reverse-recovery losses matter, such as output rectification in a 100–200 kHz DC-DC converter.

ROHM lists the RB085BGE-60TL as Active in its current portfolio, with RoHS3 compliance.