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ROHM Semiconductor R8009KNXC7G — Analog & Data Acquisition

ROHM Semiconductor R8009KNXC7G

MPNR8009KNXC7G
End of Life

HIGH-SPEED SWITCHING NCH 800V 9A

$4.01Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

R8009KNXC7G specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Ta)
Power dissipation59W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 5mA
Rds on (Max) @ id, vgs600mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds900 pF @ 100 V