800 V, 6 A N-Channel — high-speed switching MOSFET
The R8006KNXC7G: With a gate charge of 22 nC at 10 V and input capacitance of 650 pF at 100 V, the switching losses stay low enough for power supplies and inverters running in the tens-of-kilohertz range. The 150°C maximum junction temperature gives thermal headroom for continuous operation in enclosed or forced-air environments.
Package and mounting — TO-220 Full Pack
Housed in a TO-220-3 Full Pack (supplier device package TO-220FM), the fully molded backside eliminates the need for an insulating pad between the tab and the heatsink — the package itself provides isolation. Through-hole mounting suits point-to-point wiring or PCB layouts where the tab is screwed directly to a chassis or heatsink. The 4.5 V maximum gate threshold at 4 mA means a standard 10 V gate drive fully enhances the channel, matching common MOSFET driver outputs.