R8006KND3TL1

ROHM Semiconductor

HIGH-SPEED SWITCHING NCH 800V 6A

ROHM Semiconductor R8006KND3TL1
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[IN STOCK] In Stock: 5 pcs
$6.48/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

R8006KND3TL1 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Ta)
Power dissipation83W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 4mA
Rds on (Max) @ id, vgs900mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds650 pF @ 100 V
R8006KND3TL1
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