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ROHM Semiconductor R8005ANX

ROHM Semiconductor R8005ANX

MPNR8005ANX
End of Life

MOSFET N-CH 800V 5A TO220FM

$2.09Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

R8005ANX specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation40W (Tc)
Operating temperature150°C (TJ)
PackageBulk
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 1mA
Rds on (Max) @ id, vgs2.08Ohm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs21 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds485 pF @ 25 V