R8002CND3FRATL

ROHM Semiconductor · Automotive, AEC-Q101 Series

MOSFET N-CH 800V 2A TO252

ROHM Semiconductor R8002CND3FRATL
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[IN STOCK] In Stock: 2 pcs
$6.75/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

R8002CND3FRATL specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101
FET typeN-Channel
MountingSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2A (Tc)
Power dissipation69W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5.5V @ 1mA
Rds on (Max) @ id, vgs4.3Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs12.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds240 pF @ 25 V
R8002CND3FRATL
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