ROHM Semiconductor R8002ANJGTL
MPNR8002ANJGTL
End of Life
NCH 800V 2A POWER MOSFET : R8002
$3.11Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 2A (Tc) |
| Power dissipation | 62W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 5V @ 1mA |
| Rds on (Max) @ id, vgs | 4.3Ohm @ 1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 13 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 250 pF @ 25 V |