Skip to main content
ROHM Semiconductor R6520KNX3C16 — Analog & Data Acquisition

ROHM Semiconductor R6520KNX3C16

MPNR6520KNX3C16
End of Life

650V 20A, TO-220AB, HIGH-SPEED S

$4.53Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

R6520KNX3C16 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation220W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 630µA
Rds on (Max) @ id, vgs205mOhm @9.5A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1550 pF @ 25 V