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ROHM Semiconductor R6509END3TL1 — Discrete Semiconductors
ROHM Semiconductor

ROHM R6509END3TL1 N-Channel MOSFET, 650V 9A TO-252

MPNR6509END3TL1
End of Life

ROHM Semiconductor R6509END3TL1 N-Channel MOSFET, 650 V, 9 A, TO-252-3 (DPak), 585 mOhm Rds(on) at 10 V, 24 nC gate charge.

$2.16Ref. price · indicative, final on quote
R6509END3TL1 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockIn Stock (17)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

R6509END3TL1 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation94W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 230µA
Rds on (Max) @ id, vgs585mOhm @ 2.8A, 10V
Gate charge (Qg) (Max) @ vgs24 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds430 pF @ 25 V

Product details

650 V, 9 A — loss budget and switching trajectory

The R6509END3TL1: Gate charge totals 24 nC at 10 V, and input capacitance is 430 pF at 25 V drain — these set the switching loss in hard-switched topologies. A driver capable of sourcing 1 A can turn the gate on in about 24 ns, keeping crossover losses manageable at switching frequencies up to 100 kHz.

Compliance and regulatory status

RoHS3 compliant (no exemption-based lead content), which simplifies EU and California regulatory reporting for the finished assembly.

Frequently asked questions

What is the R6509END3TL1's Rds(on) at operating temperature?

The datasheet lists 585 mOhm maximum at 25 °C junction and 10 V gate drive. At 125 °C junction, expect the on-resistance to roughly double — approximately 1.2 Ohm — so conduction loss calculations should use the hot value, not the 25 °C headline.