ROHM Semiconductor R6504ENXC7G
MPNR6504ENXC7G
End of Life
650V 4A TO-220FM, LOW-NOISE POWE
$2.53Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4A (Ta) |
| Power dissipation | 40W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 130µA |
| Rds on (Max) @ id, vgs | 1.05Ohm @ 1.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 220 pF @ 25 V |