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ROHM Semiconductor R6030JNZ4C13

ROHM Semiconductor R6030JNZ4C13

MPNR6030JNZ4C13
End of Life

MOSFET N-CH 600V 30A TO247G

$10.96Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

R6030JNZ4C13 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)15V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation370W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id7V @ 5.5mA
Rds on (Max) @ id, vgs143mOhm @ 15A, 15V
Gate charge (Qg) (Max) @ vgs74 nC @ 15 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 100 V