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ROHM Semiconductor R6025JNZ4C13

ROHM Semiconductor R6025JNZ4C13

MPNR6025JNZ4C13
End of Life

MOSFET N-CH 600V 25A TO247G

$9.51Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

R6025JNZ4C13 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)15V
Current - continuous drain (Id) @ 25°C25A (Tc)
Power dissipation306W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id7V @ 4.5mA
Rds on (Max) @ id, vgs182mOhm @ 12.5A, 15V
Gate charge (Qg) (Max) @ vgs57 nC @ 15 V
Input capacitance (Ciss) (Max) @ vds1900 pF @ 100 V