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ROHM Semiconductor R6020KNZ4C13

ROHM Semiconductor R6020KNZ4C13

MPNR6020KNZ4C13
End of Life

MOSFET N-CH 600V 20A TO247

$7.92Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

R6020KNZ4C13 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation231W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 1mA
Rds on (Max) @ id, vgs196mOhm @ 9.5A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1550 pF @ 25 V