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ROHM Semiconductor R6009JNXC7G

ROHM Semiconductor R6009JNXC7G

MPNR6009JNXC7G
End of Life

MOSFET N-CH 600V 9A TO220FM

$3.39Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

R6009JNXC7G specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)15V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation53W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id7V @ 1.38mA
Rds on (Max) @ id, vgs585mOhm @ 4.5A, 15V
Gate charge (Qg) (Max) @ vgs22 nC @ 15 V
Input capacitance (Ciss) (Max) @ vds645 pF @ 100 V