ROHM Semiconductor R6009JNJGTL
MPNR6009JNJGTL
End of Life
MOSFET N-CH 600V 9A LPTS
$2.91Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 15V |
| Current - continuous drain (Id) @ 25°C | 9A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 7V @ 1.38mA |
| Rds on (Max) @ id, vgs | 585mOhm @ 4.5A, 15V |
| Gate charge (Qg) (Max) @ vgs | 22 nC @ 15 V |
| Input capacitance (Ciss) (Max) @ vds | 645 pF @ 100 V |