R6000ENHTB1

ROHM Semiconductor

600V 0.5A, SOP8, LOW-NOISE POWER

ROHM Semiconductor R6000ENHTB1
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[IN STOCK] In Stock: 12 pcs
$2.93/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

R6000ENHTB1 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C500mA (Ta)
Power dissipation2W (Ta)
Operating temperature150°C
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id5V @ 1mA
Rds on (Max) @ id, vgs8.8Ohm @ 200mA, 10V
Gate charge (Qg) (Max) @ vgs4.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds45 pF @ 25 V
R6000ENHTB1
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