ROHM Semiconductor R6000ENHTB1
MPNR6000ENHTB1
End of Life
600V 0.5A, SOP8, LOW-NOISE POWER
$0.9Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 500mA (Ta) |
| Power dissipation | 2W (Ta) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 5V @ 1mA |
| Rds on (Max) @ id, vgs | 8.8Ohm @ 200mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 4.3 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 45 pF @ 25 V |