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ROHM Semiconductor QS8J2TR

ROHM Semiconductor QS8J2TR

MPNQS8J2TR
End of Life

MOSFET 2P-CH 12V 4A TSMT8

$0.96Ref. price · indicative, final on quote
Packaging8-SMD, Flat Lead
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

QS8J2TR specifications
ParameterValue
FET type2 P-Channel (Dual)
MountingSurface Mount
Drain to source voltage12V
Current - continuous drain (Id) @ 25°C4A
Power - max550mW
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate, 1.5V Drive
Case8-SMD, Flat Lead
Vgs(th) (Max) @ id1V @ 1mA
Rds on (Max) @ id, vgs36mOhm @ 4A, 4.5V
Gate charge (Qg) (Max) @ vgs20nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds1940pF @ 6V