ROHM Semiconductor HS8K1TB
MPNHS8K1TB
End of Life
30V NCH+NCH POWER MOSFET
$0.88Ref. price · indicative, final on quote
Packaging8-UDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 10A (Ta), 11A (Ta) |
| Power - max | 2W (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Standard |
| Case | 8-UDFN Exposed Pad |
| Vgs(th) (Max) @ id | 2.5V @ 1mA |
| Rds on (Max) @ id, vgs | 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6nC @ 10V, 7.4nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 348pF @ 15V, 429pF @ 15V |