HS8K11TB

ROHM Semiconductor

MOSFET 2N-CH 30V 7A/11A HSML

ROHM Semiconductor HS8K11TB
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[IN STOCK] In Stock: 30 pcs
$1.24/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

HS8K11TB specifications
Parameter / AttributeSpecification / Value
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C7A, 11A
Power - max2W
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-UDFN Exposed Pad
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs17.9mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs11.1nC @ 10V
Input capacitance (Ciss) (Max) @ vds500pF @ 15V
HS8K11TB
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