ROHM Semiconductor HP8ME5TB1
MPNHP8ME5TB1
End of Life
MOSFET N/P-CH 100V 3A/8.5A 8HSOP
$1.39Ref. price · indicative, final on quote
Packaging8-PowerTDFN
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 100V |
| Current - continuous drain (Id) @ 25°C | 3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc) |
| Power - max | 3W (Ta), 20W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Standard |
| Configuration | N and P-Channel |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.5V @ 1mA |
| Rds on (Max) @ id, vgs | 193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 2.9nC @ 10V, 19.7nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 90pF @ 50V, 590pF @ 50V |