HP8ME5TB1

ROHM Semiconductor

MOSFET N/P-CH 100V 3A/8.5A 8HSOP

ROHM Semiconductor HP8ME5TB1
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[IN STOCK] In Stock: 2 pcs
$1.07/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

HP8ME5TB1 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage100V
Current - continuous drain (Id) @ 25°C3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc)
Power - max3W (Ta), 20W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureStandard
ConfigurationN and P-Channel
Case8-PowerTDFN
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs2.9nC @ 10V, 19.7nC @ 10V
Input capacitance (Ciss) (Max) @ vds90pF @ 50V, 590pF @ 50V
HP8ME5TB1
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