HP8K22TB

ROHM Semiconductor

30V NCH+NCH MID POWER MOSFET

ROHM Semiconductor HP8K22TB
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[IN STOCK] In Stock: 1 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

HP8K22TB specifications
Parameter / AttributeSpecification / Value
FET type2 N-Channel (Half Bridge)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C27A, 57A
Power - max25W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs4.6mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs16.8nC @ 10V
Input capacitance (Ciss) (Max) @ vds1080pF @ 15V
HP8K22TB
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