What this isolated gate driver brings to a power stage
The ROHM BM60059FV-CE2 is a single-channel digital isolator with a built-in gate driver, using magnetic coupling to deliver 2500Vrms of galvanic isolation between the logic-side input and the power-stage output. It is designed to drive the gate of a power MOSFET, IGBT, or SiC MOSFET directly, with a peak output current rating of 1A.
Propagation delay and pulse-width distortion — timing budget for dead-time
The maximum propagation delay from input to output is 450ns for both rising and falling edges (tpLH / tpHL). Pulse-width distortion is capped at 400ns maximum. In a half-bridge or full-bridge topology, these numbers set the lower bound on the dead-time you need to program into the controller — if you try to run dead-time below the PWD spec, you risk shoot-through on one switching cycle. The 1A peak output is enough to drive the gate charge of a typical SiC MOSFET or medium-current IGBT through the Miller plateau without excessive switching loss, but the 450ns delay means the dead-time budget will be in the hundreds of nanoseconds, not single-digit nanoseconds.
At the low end, a 5V rail drives the gate of a logic-level MOSFET; at 24V, the same part drives a standard IGBT or a SiC MOSFET that needs a +15V to +20V gate drive. The 1A peak output current is a typical figure — enough to charge the gate capacitance quickly, but not a high-current driver for paralleled modules. The high-side and low-side output currents (40µA and 160µA respectively) are the static drive levels, not the switching peak; the 1A peak is what matters for the turn-on and turn-off edges.