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ROHM Semiconductor BAS21HYT116

ROHM Semiconductor BAS21HYT116

MPNBAS21HYT116
End of Life

DIODE GEN PURP 200V 200MA SOT23

$0.4Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BAS21HYT116 specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 200 mA
Current - reverse leakage @ vr100 nA @ 200 V
Current - average rectified200mA
Operating temperature - junction150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Capacitance @ vr,2.5pF @ 0V, 1MHz
Reverse recovery time50 ns