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Panjit International Inc. BAS40TW_R1_00001 — Discrete Semiconductors

Panjit International Inc. BAS40TW_R1_00001

MPNBAS40TW_R1_00001
Active
$0.3500Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BAS40TW_R1_00001 specifications
ParameterValue
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)40 V
Voltage - forward (Vf) (Max) @ if1 V @ 40 mA
Current - reverse leakage @ vr1 µA @ 25 V
Current - average rectified (Io) (per diode)200mA (DC)
Operating temperature - junction-55°C~125°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Diode configuration3 Independent
Reverse recovery time5 ns