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onsemi NTMFSC4D2N10MC — Discrete Semiconductors

onsemi NTMFSC4D2N10MC

MPNNTMFSC4D2N10MC
Active

MOSFET N-CH 100V 29.6A/116A 8DFN

$3.9200Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFSC4D2N10MC specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Current - continuous drain (Id) @ 25°C29.6A (Ta), 116A (Tc)
Power dissipation7.9W (Ta), 122W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4.3mOhm @ 44A, 10V
Gate charge (Qg) (Max) @ vgs42 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2856 pF @ 50 V