NTMFS7D8N10GTWG
onsemi
N-CHANNEL SHIELDED GATE POWERTRE
[IN STOCK] In Stock: 2 pcs
MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 14A (Ta), 110A (Tc) |
| Power dissipation | 3W (Ta), 187W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4V @ 254µA |
| Rds on (Max) @ id, vgs | 7.6mOhm @ 48A, 10V |
| Gate charge (Qg) (Max) @ vgs | 92 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6180 pF @ 50 V |
NTMFS7D8N10GTWG
[ALLOC] verified