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onsemi NTMFS7D8N10GTWG — Discrete Semiconductors

onsemi NTMFS7D8N10GTWG

MPNNTMFS7D8N10GTWG
Active

N-CHANNEL SHIELDED GATE POWERTRE

$3.4500Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS7D8N10GTWG specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C14A (Ta), 110A (Tc)
Power dissipation3W (Ta), 187W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4V @ 254µA
Rds on (Max) @ id, vgs7.6mOhm @ 48A, 10V
Gate charge (Qg) (Max) @ vgs92 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6180 pF @ 50 V