onsemi NTMFS6H836NT1G
MPNNTMFS6H836NT1G
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$1.5100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 15A (Ta), 74A (Tc) |
| Power dissipation | 3.7W (Ta), 89W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN, 5 Leads |
| Vgs(th) (Max) @ id | 4V @ 95µA |
| Rds on (Max) @ id, vgs | 6.7mOhm @ 15A, 10V |
| Gate charge (Qg) (Max) @ vgs | 25 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1640 pF @ 40 V |