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onsemi NTMFS6H818NT1G — Discrete Semiconductors

onsemi NTMFS6H818NT1G

MPNNTMFS6H818NT1G
Active
$3.9900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS6H818NT1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C20A (Ta), 123A (Tc)
Power dissipation3.8W (Ta), 136W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id4V @ 190µA
Rds on (Max) @ id, vgs3.7mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs46 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3100 pF @ 40 V