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onsemi NTMFS6H800NLT1G — Discrete Semiconductors

onsemi NTMFS6H800NLT1G

MPNNTMFS6H800NLT1G
Active
$3.3400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS6H800NLT1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C30A (Ta), 224A (Tc)
Power dissipation3.9W (Ta), 214W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2V @ 330µA
Rds on (Max) @ id, vgs1.9mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs112 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6900 pF @ 40 V