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onsemi NTMFS6D1N08HT1G — Discrete Semiconductors

onsemi NTMFS6D1N08HT1G

MPNNTMFS6D1N08HT1G
Active

MOSFET N-CH 80V 17A/89A 5DFN

$1.6700Ref. price · indicative, final on quote
Packaging8-PowerTDFN, 5 Leads
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS6D1N08HT1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C17A (Ta), 89A (Tc)
Power dissipation3.8W (Ta), 104W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id4V @ 120µA
Rds on (Max) @ id, vgs5.5mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs32 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2085 pF @ 40 V