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onsemi NTMFS5834NLT1G — Discrete Semiconductors

onsemi NTMFS5834NLT1G

MPNNTMFS5834NLT1G
Obsolete
$2.0100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS5834NLT1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C14A (Ta), 75A (Tc)
Power dissipation3.6W (Ta), 107W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs9.3mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs24 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1231 pF @ 20 V