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onsemi NTMFS4H02NFT3G — Discrete Semiconductors

onsemi NTMFS4H02NFT3G

MPNNTMFS4H02NFT3G
Last Buy
$3.9875Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS4H02NFT3G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C37A (Ta), 193A (Tc)
Power dissipation3.13W (Ta), 83W (Tc)
Operating temperature150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.1V @ 250µA
Rds on (Max) @ id, vgs1.4mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs40.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2652 pF @ 12 V