onsemi NTMFS4H01NFT3G
MPNNTMFS4H01NFT3G
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 25 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 54A (Ta), 334A (Tc) |
| Power dissipation | 3.2W (Ta), 125W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN, 5 Leads |
| Vgs(th) (Max) @ id | 2.1V @ 250µA |
| Rds on (Max) @ id, vgs | 0.7mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 82 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5538 pF @ 12 V |