Skip to main content
onsemi NTMFS4H013NFT3G — Discrete Semiconductors

onsemi NTMFS4H013NFT3G

MPNNTMFS4H013NFT3G
Obsolete
$1.2100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS4H013NFT3G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C43A (Ta), 269A (Tc)
Power dissipation2.7W (Ta), 104W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.1V @ 250µA
Rds on (Max) @ id, vgs0.9mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3923 pF @ 12 V