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onsemi NTMFS4C810NAT3G — Discrete Semiconductors

onsemi NTMFS4C810NAT3G

MPNNTMFS4C810NAT3G
Last Buy

TRENCH 6 30V NCH

$0.9100Ref. price · indicative, final on quote
Packaging8-PowerTDFN, 5 Leads
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS4C810NAT3G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8.2A (Ta), 46A (Tc)
Power dissipation750mW (Ta), 23.6W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs5.88mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs18.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds987 pF @ 15 V