NTMFS4C302NT1G

onsemi

MOSFET N-CH 30V 41A/230A 5DFN

onsemi NTMFS4C302NT1G
Download datasheet (PDF)
[IN STOCK] In Stock: 116 pcs
$0.77/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTMFS4C302NT1G specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C41A (Ta), 230A (Tc)
Power dissipation3.13W (Ta), 96W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs1.15mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs82 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5780 pF @ 15 V
NTMFS4C302NT1G
[ALLOC] verified
Quote