Skip to main content
onsemi NTMFS4C250NT1G — Discrete Semiconductors

onsemi NTMFS4C250NT1G

MPNNTMFS4C250NT1G
Obsolete
$0.7200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS4C250NT1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C11A (Ta), 69A (Tc)
Power dissipation770mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.1V @ 250µA
Rds on (Max) @ id, vgs4mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs11.6 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1683 pF @ 15 V