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onsemi NTMFS4C10NT1G-001 — Discrete Semiconductors

onsemi NTMFS4C10NT1G-001

MPNNTMFS4C10NT1G-001
End of Life
$1.0000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS4C10NT1G-001 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8.2A (Ta), 46A (Tc)
Power dissipation750mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs6.95mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs18.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds987 pF @ 15 V