onsemi NTMFS4C09NAT1G
MPNNTMFS4C09NAT1G
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$1.1100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Current - continuous drain (Id) @ 25°C | 9A (Ta), 52A (Tc) |
| Power dissipation | 760mW (Ta) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN, 5 Leads |
| Vgs(th) (Max) @ id | 2.1V @ 250µA |
| Rds on (Max) @ id, vgs | 5.8mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 1.9 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1252 pF @ 15 V |